Device and shower nozzle that contains it device for bear semiconductor wafer
The utility model relates to a semiconductor processing apparatus that the mixed type is 200 millimeters / 300 millimeters. In the aspect of one, disclose some devices, its process chamber that makes the quilt design be used for carrying out plasma enhanced chemical vapor deposition on 300 millimete...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model relates to a semiconductor processing apparatus that the mixed type is 200 millimeters / 300 millimeters. In the aspect of one, disclose some devices, its process chamber that makes the quilt design be used for carrying out plasma enhanced chemical vapor deposition on 300 millimeters wafer can be carried out on 200 millimeters wafer. More specifically, disclose by the design be used for 200 millimeters the wafer and its can with 300 millimeters wafer processing chamber compatible base, loading board and shower nozzle through the decoration mutually. Still observe, it is suitable in the quality with 300 millimeters the sedimentary membrane of equipment that uses them to replace to use the sedimentary membrane of 200 millimeters device through decorateing.
本实用新型涉及混合型200毫米/300毫米的半导体处理装置。在个方面,公开了些装置,其使得被设计用于在300毫米的晶片上进行等离子体增强化学气相沉积的处理室能在200毫米的晶片上执行。更具体地,公开了已被设计用于200毫米的晶片的并且其能与300毫米的晶片处理室相兼容的经修饰的基座、承载板和喷头。还已经观察到,使用经修饰的200毫米的装置所沉积的膜与使用它们所替换的300毫米的设备所沉积的膜在质量上是相当的。 |
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