Heavy current field effect transistor's packaging structure
The utility model discloses a heavy current field effect transistor's packaging structure, radiating electrically conductive base can be electrically conducted in the adoption, circuit board bottom surface is fixed on electrically conductive base, the bottom of electrode connecting seat is elec...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The utility model discloses a heavy current field effect transistor's packaging structure, radiating electrically conductive base can be electrically conducted in the adoption, circuit board bottom surface is fixed on electrically conductive base, the bottom of electrode connecting seat is electrically conductive to be connected on the neat face of circuit, and field effect transistor's GS utmost point pin towards the electrode connecting seat and with the welding of circuit board, field effect transistor's D utmost point pin is connected outwards and with electrically conductive base is electrically conductive for all field effect transistor are parallelly connected to be set up, the utility model adopts the above structure, have the overall structure compactness, small, connect characteristics reliable and low cost, all electrically conductive welding is on electrically conductive base for all field effect transistor's D utmost point pin, it is good to make it the heat dissipation, the parallelly connected |
---|