Nonvolatile memory equipment and electron device

The utility model provides a nonvolatile memory equipment and electron device, nonvolatile memory equipment is provided: memory array, it is including arranging the storage location of embarking on journey and being listed as, every unit has looks induced current conducting region and control grid polar region to with the control grid polar region of the storage location of delegation being coupled to the control grid terminal and by the biasing at corresponding control grid voltage, and the control grid decoder, it is used for selecting each control grid polar region of going and with its biasing at corresponding control voltage according to the operation that will carry out the storage location. The electric current conducting region of storage location is arranged in same block trap to the control grid decoder has a plurality of drive blocks, in a plurality of drive blocks every drive block to corresponding a plurality of line of array provide control grid voltage, and a plurality of drive blocks are provi