PIN structure ultraviolet photoelectric detector

The utility model discloses a PIN structure ultraviolet photoelectric detector, its epitaxial layer include by the down supreme n type gaN substrate that sets gradually, alInGaN quarternary alloy absorbed layer and p type niO layer, the p type ohmic electrode who draws forth on the p type niO layer,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	GUO WENHUA, KUANG YAWEI, WANG SHUCHANG, LI ZHONGGUO, XING JINHUA, ZHANG HUIGUO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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