PIN structure ultraviolet photoelectric detector

The utility model discloses a PIN structure ultraviolet photoelectric detector, its epitaxial layer include by the down supreme n type gaN substrate that sets gradually, alInGaN quarternary alloy absorbed layer and p type niO layer, the p type ohmic electrode who draws forth on the p type niO layer, the n type ohmic electrode who draws forth on the n type gaN substrate. Adopt alInGaN quaternary alloy material as the absorbed layer, consequently can effectively reduce the dark current of detector, improved ultraviolet photoelectric detector's sensitivity and response. Adopt niO as p type layer, greatly reduced and n type gaN substrate between lattice mismatch, improvement ultraviolet photoelectric detector's comprehensive properties. 本实用新型公开了种PIN结构紫外光电探测器，其外延层包括由下至上依次设置的n型GaN衬底、AlInGaN四元合金吸收层和p型NiO层，所述p型NiO层上引出的p型欧姆电极，所述n型GaN衬底上引出的n型欧姆电极。采用了AlInGaN四元合金材料作为吸收层，因此能有效降低探测器的暗电流，提高紫外光电探测器的灵敏度和响应度。采用NiO作为p型层，极大减小了与n型GaN衬底之间的晶格失配，提高紫外光电探测器的综合性能。