Polysilicon ingoting furnace

The utility model provides a reducing the crystal orientation crooked polysilicon ingoting furnace that grows, including thermal -insulated cage, being equipped with the crucible in the thermal -insulated cage, the crucible bottom is equipped with the crucible bottom plate, and the crucible top is covered with the backplate, and the crucible top is equipped with the hot topping ware, the side is equipped with the lateral part heater, and crucible bottom plate lower extreme sets up the DS piece, and the DS piece sets up on the graphite support column, and even there is a heat preservation felt graphite support column outer lane, is connected with the heat preservation felt bottom the thermal -insulated cage. Compared with the prior art, the utility model discloses can reduce G5 or G6 polysilicon ingoting furnace crucible border side spindle crystal orientation grow crooked earlier to, and then can improve the photoelectric conversion efficiency of silicon chip. 本实用提供一种减少晶向生长弯曲的多晶铸锭炉，包括隔热笼，隔热笼内设有坩埚，坩埚底部设有坩埚底板，坩