InGaN solar cell

The utility model discloses an inGaN solar cell, including substrate, gaN buffer layer, n -GaN layer, n -InGaN layer and p -GaN layer, its characterized in that: the n -InGaN layer with there are i -InxGa1 -xN layer, p -InyGa1 -yN layer between the p -GaN layer in proper order, there is translucent...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	ZHANG KAIJU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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