InGaN solar cell

The utility model discloses an inGaN solar cell, including substrate, gaN buffer layer, n -GaN layer, n -InGaN layer and p -GaN layer, its characterized in that: the n -InGaN layer with there are i -InxGa1 -xN layer, p -InyGa1 -yN layer between the p -GaN layer in proper order, there is translucent...

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Bibliographische Detailangaben
1. Verfasser:	ZHANG KAIJU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	The utility model discloses an inGaN solar cell, including substrate, gaN buffer layer, n -GaN layer, n -InGaN layer and p -GaN layer, its characterized in that: the n -InGaN layer with there are i -InxGa1 -xN layer, p -InyGa1 -yN layer between the p -GaN layer in proper order, there is translucent electric current extension layer above the p -GaN layer, has the positive electrode on the translucent electric current extension layer, there is the negative electrode on the n -GaN layer. The utility model has the advantages of: reduce the thickness on inGaN layer, improved the quality on inGaN layer to a certain extent, introduce i -InxGa1 -xN layer and p -InyGa1 -yN layer, improved photoelectric conversion efficiency, easily the preparation, through translucent electric current extension layer and just, the setting of negative electrode, has realized the direct of complete solar battery and has used to further improve the radioresistance ability, prolonged the life of battery.