LED epitaxial structure of high hole injection efficiency

LED epitaxial structure of high hole injection efficiency

LED epitaxial structure of high hole injection efficiency relates to the epitaxial technical field of emitting diode. The utility model discloses follow supreme substrate, gaN buffer layer, the gaN layer of not adulterateing, N type gaN layer, multi -quantum well, electron barrier layer, P type gaN...

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Hauptverfasser: ZHENG JIANQIN, TIAN YU, LAI ZHIHAO, LIN ZHENGZHI, WU ZHENLONG, ZENG QIYAO
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator ZHENG JIANQIN
TIAN YU
LAI ZHIHAO
LIN ZHENGZHI
WU ZHENLONG
ZENG QIYAO
description LED epitaxial structure of high hole injection efficiency relates to the epitaxial technical field of emitting diode. The utility model discloses follow supreme substrate, gaN buffer layer, the gaN layer of not adulterateing, N type gaN layer, multi -quantum well, electron barrier layer, P type gaN layer and the P type contact layer of including in proper order down. Wherein multi -quantum well comprises inGaN layer and gaN layer. Structurally, the electron barrier layer comprises p type alxGa1 -xN layer, alN layer and p type inyGa1 -yN layer from down supreme in proper order, wherein 0&lt, X
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The utility model discloses follow supreme substrate, gaN buffer layer, the gaN layer of not adulterateing, N type gaN layer, multi -quantum well, electron barrier layer, P type gaN layer and the P type contact layer of including in proper order down. Wherein multi -quantum well comprises inGaN layer and gaN layer. Structurally, the electron barrier layer comprises p type alxGa1 -xN layer, alN layer and p type inyGa1 -yN layer from down supreme in proper order, wherein 0&amp;lt, X &lt;= 0.3, 0&amp;lt, Y &lt;= 0.2. The electron barrier layer includes a 8 -12 growth cycle, and growth pressure is 100 -200Torr, grows in the nitrogen gas environment. The utility model discloses a constitute the electron barrier layer by p type alxGa1 -xN layer, alN layer and p type inyGa1 -yN superlattice layer, improve hole concentration and mobility through meeting an emergency and reducing the alloy scattering, promote light emitting diode's luminous efficacy.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160113&amp;DB=EPODOC&amp;CC=CN&amp;NR=204966527U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20160113&amp;DB=EPODOC&amp;CC=CN&amp;NR=204966527U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHENG JIANQIN</creatorcontrib><creatorcontrib>TIAN YU</creatorcontrib><creatorcontrib>LAI ZHIHAO</creatorcontrib><creatorcontrib>LIN ZHENGZHI</creatorcontrib><creatorcontrib>WU ZHENLONG</creatorcontrib><creatorcontrib>ZENG QIYAO</creatorcontrib><title>LED epitaxial structure of high hole injection efficiency</title><description>LED epitaxial structure of high hole injection efficiency relates to the epitaxial technical field of emitting diode. 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The utility model discloses a constitute the electron barrier layer by p type alxGa1 -xN layer, alN layer and p type inyGa1 -yN superlattice layer, improve hole concentration and mobility through meeting an emergency and reducing the alloy scattering, promote light emitting diode's luminous efficacy.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD0cXVRSC3ILEmsyEzMUSguKSpNLiktSlXIT1PIyEzPUMjIz0lVyMzLSk0uyczPU0hNS8tMzkzNS67kYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxzn5GBiaWZmamRuahocZEKQIAhaAvYg</recordid><startdate>20160113</startdate><enddate>20160113</enddate><creator>ZHENG JIANQIN</creator><creator>TIAN YU</creator><creator>LAI ZHIHAO</creator><creator>LIN ZHENGZHI</creator><creator>WU ZHENLONG</creator><creator>ZENG QIYAO</creator><scope>EVB</scope></search><sort><creationdate>20160113</creationdate><title>LED epitaxial structure of high hole injection efficiency</title><author>ZHENG JIANQIN ; TIAN YU ; LAI ZHIHAO ; LIN ZHENGZHI ; WU ZHENLONG ; ZENG QIYAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN204966527UU3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHENG JIANQIN</creatorcontrib><creatorcontrib>TIAN YU</creatorcontrib><creatorcontrib>LAI ZHIHAO</creatorcontrib><creatorcontrib>LIN ZHENGZHI</creatorcontrib><creatorcontrib>WU ZHENLONG</creatorcontrib><creatorcontrib>ZENG QIYAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHENG JIANQIN</au><au>TIAN YU</au><au>LAI ZHIHAO</au><au>LIN ZHENGZHI</au><au>WU ZHENLONG</au><au>ZENG QIYAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LED epitaxial structure of high hole injection efficiency</title><date>2016-01-13</date><risdate>2016</risdate><abstract>LED epitaxial structure of high hole injection efficiency relates to the epitaxial technical field of emitting diode. The utility model discloses follow supreme substrate, gaN buffer layer, the gaN layer of not adulterateing, N type gaN layer, multi -quantum well, electron barrier layer, P type gaN layer and the P type contact layer of including in proper order down. Wherein multi -quantum well comprises inGaN layer and gaN layer. Structurally, the electron barrier layer comprises p type alxGa1 -xN layer, alN layer and p type inyGa1 -yN layer from down supreme in proper order, wherein 0&amp;lt, X &lt;= 0.3, 0&amp;lt, Y &lt;= 0.2. The electron barrier layer includes a 8 -12 growth cycle, and growth pressure is 100 -200Torr, grows in the nitrogen gas environment. The utility model discloses a constitute the electron barrier layer by p type alxGa1 -xN layer, alN layer and p type inyGa1 -yN superlattice layer, improve hole concentration and mobility through meeting an emergency and reducing the alloy scattering, promote light emitting diode's luminous efficacy.</abstract><oa>free_for_read</oa></addata></record>
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ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title LED epitaxial structure of high hole injection efficiency
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