LED epitaxial structure of high hole injection efficiency

LED epitaxial structure of high hole injection efficiency

LED epitaxial structure of high hole injection efficiency relates to the epitaxial technical field of emitting diode. The utility model discloses follow supreme substrate, gaN buffer layer, the gaN layer of not adulterateing, N type gaN layer, multi -quantum well, electron barrier layer, P type gaN...

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Bibliographische Detailangaben
Hauptverfasser: ZHENG JIANQIN, TIAN YU, LAI ZHIHAO, LIN ZHENGZHI, WU ZHENLONG, ZENG QIYAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:LED epitaxial structure of high hole injection efficiency relates to the epitaxial technical field of emitting diode. The utility model discloses follow supreme substrate, gaN buffer layer, the gaN layer of not adulterateing, N type gaN layer, multi -quantum well, electron barrier layer, P type gaN layer and the P type contact layer of including in proper order down. Wherein multi -quantum well comprises inGaN layer and gaN layer. Structurally, the electron barrier layer comprises p type alxGa1 -xN layer, alN layer and p type inyGa1 -yN layer from down supreme in proper order, wherein 0&lt, X