LED epitaxial structure with layer is built to stress compensation effect

LED epitaxial structure with layer is built to stress compensation effect relates to emitting diode technical field. The utility model discloses supreme graphical substrate, alN buffer layer, U type gaN layer, N type gaN layer, shallow quantum well, active area, electron barrier layer and the P type...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHENG JIANQIN, TIAN YU, WU ZHENLONG, DONG FA, ZENG QIYAO, LI PENGFEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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