LED epitaxial structure with layer is built to stress compensation effect

LED epitaxial structure with layer is built to stress compensation effect relates to emitting diode technical field. The utility model discloses supreme graphical substrate, alN buffer layer, U type gaN layer, N type gaN layer, shallow quantum well, active area, electron barrier layer and the P type gaN layer of including is in proper order down followed to the structure. Structurally, it builds the layer to be equipped with the stress compensation effect between active area and the electron barrier layer. The stress compensation effect is built the layer and is followed supreme intrinsic semiconductor layer, N type semiconductor layer and the P type semiconductor layer of including in proper order down. Compared with the prior art, the utility model discloses an increase to build the layer, thereby can improve the electron blocks the benefit, increases electronic injection, reduces the efficiency decay and carry the high radiation recombination probability to reach reinforcing LED internal quantum efficiency's mesh.