Transient voltage inhibitor encapsulation subassembly
The utility model discloses a transient voltage inhibitor encapsulation subassembly, its characterized in that includes: package frame is including a plurality of pins, first capacitive diode cluster spare is installed on the first pin in a plurality of pins, and a zener diode, install on the second...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The utility model discloses a transient voltage inhibitor encapsulation subassembly, its characterized in that includes: package frame is including a plurality of pins, first capacitive diode cluster spare is installed on the first pin in a plurality of pins, and a zener diode, install on the second pin in a plurality of pins, wherein, first capacitive diode cluster spare with connect via first bonding line electricity between the zener diode. This transient voltage inhibitor encapsulation subassembly adopts capacitive diode cluster spare and zener diode's tandem position to improve transient response speed. Owing to adopt nonpolarity capacitive diode cluster spare, consequently, the arbitrary lead wire of capacitive diode cluster spare can with zener diode's arbitrary pin connection to semiconductor device's connection error reduces owing to leading to the possibility of chip damage. |
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