Blue light LED epitaxial structure of growing on gaAs substrate

Blue light LED epitaxial structure of growing on gaAs substrate relates to emitting diode technical field. The utility model discloses supreme substrate, buffer layer, U type gaN layer, N type gaN layer, active area, electron barrier layer and the P type gaN layer of including is in proper order down followed to the structure. Structurally, the substrate is the gaAs substrate, the buffer layer includes znO buffer layer and the metal nitride buffer layer of growth on the znO buffer layer, supreme U1 type gaN layer, bragg reflection layer and the U2 type gaN layer of including is in proper order down followed on U type gaN layer. Compared with the prior art, the utility model discloses a gaAs substrate has the quality height, easily dissociates and the lower characteristics of cost relative ratio, easily do moreover the vertical stratification, easily the p type adulterate, can improve luminous efficiency.