Ditch slot type IGBT chip

The utility model provides a ditch slot type IGBT chip, belongs to semiconductor device and makes the field. Including P type injection domain (9) with and the N type buffers (8) of top, N type drift region (7), P -body type district (5), spaced apart have slot (11) are gone up in P -body type district (5), slot (11) both sides have been made the N+ type and have been distinguished (4), its characterized in that: the degree of depth of slot (11) is less than the thickness in P -body type district (5), slot (11) whole P -body type district (5) that is arranged in. The utility model discloses an in the IGBT chip, do in slot (11) in P -body type district whole P -body types districts that are located, consequently eliminated the miller electric capacity between grid G and the collecting electrode C in the at utmost, consequently do not have the process of charging to miller electric capacity at the whole in -process that switches on, reduced opening and turn -off loss of chip greatly, improved the switch efficiency of device, specially adapted IGBT's high frequency application scope.