LED epitaxial structure with luminescent layer multi -quantum well transition layer

LED epitaxial structure with luminescent layer multi -quantum well transition layer relates to emitting diode technical field. The utility model discloses the active area includes the multi -quantum well layer and grows luminescent layer multi -quantum well layer on the multi -quantum well layer. The multi -quantum well layer includes that inXGa1 -XN trap layer and the gaN who grows on inXGa1 -XN trap layer build the layer. Luminescent layer multi -quantum well layer includes that luminescent layer trap layer and the luminescent layer of growing on luminescent layer trap layer build the layer. Luminescent layer trap layer and luminescent layer are built the layer and are grown in turn, and growth cycle is a 5 -20 cycle. Luminescent layer trap layer includes from different inXGa1 -XN layer and the 0&lt of down supreme in component of growing in proper order, X&lt, 1, inyGa1 -yN transition layer and 0&lt, Y&lt, X and gaN transition layer. The utility model discloses an introduce the transition layer that the in component reduces in luminescent layer multi -quantum well, the reducing in proper order to alleviate and go to the stress that produces suddenly to in gaN's the growth course by high in ingredient inGaN of trap layer in ingredient in the luminescent layer multi -quantum well structure reduces polarization effect, improves the crystal quality of quantum well, increases the recombination probability.