Magnetism target device
The utility model provides a magnetism target device, contains the backplate that the one was made by non -magnetic metal, reaches the sputter target that the one was made by the magnetic metal. The sputter target includes that the one sets up in the basal surface of the backplate, the one is on the...
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| creator | HUANG WANYU HUANG YIYUAN LU MUSEN SU HUIJIA YE CHENGPENG YE CHONGYU ZHANG ZONGWEI |
| description | The utility model provides a magnetism target device, contains the backplate that the one was made by non -magnetic metal, reaches the sputter target that the one was made by the magnetic metal. The sputter target includes that the one sets up in the basal surface of the backplate, the one is on the contrary in the bombardment face of the basal surface, and at least one is gone through to the magnetic conduction passageway of the basal surface by the bombardment face, the straight -line distance of the basal surface to the bombardment face can define one target thickness, the magnetic conduction passageway includes that the one faces the first magnetic conduction section that the backplate direction is extended by the bombardment, the the first magnetic conduction section of the the first magnetic conduction duan bingyu of one intercommunication forms the second magnetic conduction section that the first contained angle of one extends, and the second magnetic conduction section of the second magnetic conduction of one intercommunication duan bingyu forms the third magnetic conduction section that one second contained angle ground extends towards the backplate, the second magnetic conduction section has the one and extends length, the ratio of the extension length and the target thickness is not less than 0.3 and just is not more than 1. |
| format | Patent |
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The sputter target includes that the one sets up in the basal surface of the backplate, the one is on the contrary in the bombardment face of the basal surface, and at least one is gone through to the magnetic conduction passageway of the basal surface by the bombardment face, the straight -line distance of the basal surface to the bombardment face can define one target thickness, the magnetic conduction passageway includes that the one faces the first magnetic conduction section that the backplate direction is extended by the bombardment, the the first magnetic conduction section of the the first magnetic conduction duan bingyu of one intercommunication forms the second magnetic conduction section that the first contained angle of one extends, and the second magnetic conduction section of the second magnetic conduction of one intercommunication duan bingyu forms the third magnetic conduction section that one second contained angle ground extends towards the backplate, the second magnetic conduction section has the one and extends length, the ratio of the extension length and the target thickness is not less than 0.3 and just is not more than 1.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150916&DB=EPODOC&CC=CN&NR=204644457U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20150916&DB=EPODOC&CC=CN&NR=204644457U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG WANYU</creatorcontrib><creatorcontrib>HUANG YIYUAN</creatorcontrib><creatorcontrib>LU MUSEN</creatorcontrib><creatorcontrib>SU HUIJIA</creatorcontrib><creatorcontrib>YE CHENGPENG</creatorcontrib><creatorcontrib>YE CHONGYU</creatorcontrib><creatorcontrib>ZHANG ZONGWEI</creatorcontrib><title>Magnetism target device</title><description>The utility model provides a magnetism target device, contains the backplate that the one was made by non -magnetic metal, reaches the sputter target that the one was made by the magnetic metal. 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The sputter target includes that the one sets up in the basal surface of the backplate, the one is on the contrary in the bombardment face of the basal surface, and at least one is gone through to the magnetic conduction passageway of the basal surface by the bombardment face, the straight -line distance of the basal surface to the bombardment face can define one target thickness, the magnetic conduction passageway includes that the one faces the first magnetic conduction section that the backplate direction is extended by the bombardment, the the first magnetic conduction section of the the first magnetic conduction duan bingyu of one intercommunication forms the second magnetic conduction section that the first contained angle of one extends, and the second magnetic conduction section of the second magnetic conduction of one intercommunication duan bingyu forms the third magnetic conduction section that one second contained angle ground extends towards the backplate, the second magnetic conduction section has the one and extends length, the ratio of the extension length and the target thickness is not less than 0.3 and just is not more than 1.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Magnetism target device |
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