Flexible ferroelectric memory

The utility model discloses a flexible ferroelectric memory, comprising a single silicon nano-film channel layer arranged on a flexible substrate layer. The single silicon nano-film channel layer is provided with a source electrode and a drain electrode thereon. The source electrode and the drain electrode are provided with a barrier layer thereon. The barrier layer is provided with a ferroelectric polymer layer thereon. The ferroelectric polymer layer is provided with a gate electrode thereon. According to the flexible ferroelectric memory of the abovementioned structure, a good on-off state is presented under bias voltage, the on-off voltage is about +/- 4V, the on-off ratio is about 200 times, memory requirements are met, good memory performances can be maintained after repeated bending, and the reliability is high.