Horizontal zone melting polycrystalline silicon ingot furnace

The utility model discloses a horizontal zone melting polycrystalline silicon ingot furnace which comprises a furnace body shell, a crucible, a crucible support and a heater, wherein the crucible is arranged in the crucible support; the furnace body shell is internally provided with a fixed heat-insulating layer; the crucible and the crucible support are positioned in the fixed heat-insulating layer; the crucible is a strip-shaped crucible with length longer than width, correspondingly, the crucible support is also in a strip shape; and the heater is a movable heater arranged on the outer sides of the crucible and the crucible support and can horizontally move along the length direction of the crucible, the length of the heating surface of the movable heater is shorter than the length of the crucible, and the outer side of the movable heater is provided with a movable heat-insulating layer which horizontally moves with the movable heater together. The horizontal zone melting polycrystalline silicon ingot furnace disclosed by the utility model realizes the horizontal zone melting of a silicon raw material and can be used for easily increasing the grain size, easily obtaining the pseudo-single crystal, also producing the N-shaped pseudo-single crystal under a certain condition, reducing the energy consumption through local heating and greatly reducing the cost.