High-dynamic-range image sensor pixel structure

The utility model discloses a high-dynamic-range image sensor pixel structure comprising a photodiode, a reset transistor, a source follower transistor, a selection transistor, and a floating diffusing active region. The high-dynamic-range image sensor pixel structure further comprises a first charge transfer transistor, a second charge transfer transistor, a third charge transfer transistor, and a transistor capacitor device arranged between the second charge transfer transistor and the third charge transfer transistor. Pixels acquire photoelectric signals by double exposure. The photoelectric signals acquired the first time through long-time exposure are transferred to the transistor capacitor device for storage, the photoelectric signals acquired the second time through short-time exposure are transferred to the floating diffusing active region together with the photoelectric signals stored in the transistor capacitor device, and then the photoelectric signals are read. Therefore, the photosensitive dynamic range of image sensors is expanded.