Potential barrier cascading quantum well infrared detector
The utility model discloses a potential barrier cascading quantum well infrared detector. According to the potential barrier cascading quantum well infrared detector, a compound semiconductor material serves as a substrate, seven potential barrier layers and quantum well layers different in width ar...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The utility model discloses a potential barrier cascading quantum well infrared detector. According to the potential barrier cascading quantum well infrared detector, a compound semiconductor material serves as a substrate, seven potential barrier layers and quantum well layers different in width are grown on the substrate alternately, and based on the cycle, multiple cycles of multi-quantum wells are grown repeatedly. Through adoption of the cascading tunneling structure, a photoelectric signal stronger than that of an existing quantum well infrared detector can be generated in a quantum well area at a low temperature under the irradiation of infrared light, and then the potential barrier cascading quantum well infrared detector is more suitable for a quantum well infrared focal plane device. |
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