Double-resistor PNP type Darlington power transistor

The utility model provides a double-resistor PNP type Darlington power transistor which comprises a P type substrate, a back metal layer formed at the back side of the P type substrate, and a collector which is used for forming the connection of a front stage transistor T1 and a back stage transistor T2. The N type base region of the front stage transistor T1 and the N type base region of the back stage transistor T2 which are mutually isolated are formed at the front side of the P type substrate. The double-resistor PNP type Darlington power transistor also comprises an N type region of a first stage resistor formed in a front stage transistor T1 and back stage transistor T2 isolation region. The P+ type emission region of the front stage transistor T1 is formed in the N type base region of the front stage transistor T1. The P+ type emission region of the back stage transistor T2 is formed in the N type base region of the back stage transistor T2. An oxide layer covers the front side of the P type substrate. A connection metal layer which connects the P+ type emission region of the front stage transistor T1 and the N type base region of the back stage transistor T2 is formed on the front side oxide layer of the P type substrate. The double-resistor PNP type Darlington power transistor has the advantages of good thermal stability, fast start and shutdown speed, and strong anti-burning ability.