N-type PERC crystalline silicon solar cell

The utility model discloses an N-type PERC crystalline silicon solar cell. An N-type silicon sheet with specific resistance of 0.5-12 ohm*cm is used as a base body. A front face silver-aluminum electrode, an AC coating, a boron diffusion layer, an N-type silicon base body, an aluminum oxide passive...

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Bibliographische Detailangaben
Hauptverfasser: CUI HUIYING, QIAN LIANG, ZHANG BIN, HE RUI, XIA ZHENGYUE, GAO YANTAO, XING GUOQIANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The utility model discloses an N-type PERC crystalline silicon solar cell. An N-type silicon sheet with specific resistance of 0.5-12 ohm*cm is used as a base body. A front face silver-aluminum electrode, an AC coating, a boron diffusion layer, an N-type silicon base body, an aluminum oxide passive film and an evaporation aluminum layer are successively laminated. The AC coating is formed by aluminum oxide and a silicon nitride laminated layer. Dot matrix or line matrix-shaped images are arranged on the aluminum oxide passive film. The evaporation aluminum layer contacts with local area of the N-type base body via the images on the aluminum oxide passive film. According to the utility model, the passive film is arranged on the back face of the cell body, so absorption to long-wave light is effectively increased, and technical assurance is provided for future thin cells.