Electric-power semiconductor crimping type insulating module

An electric-power semiconductor crimping type insulating module comprises a steel pressing plate, a dish spring, a steel flat pad, an insulating sleeve, a chip, a copper pressing block and a copper bottom plate located at the lower part of a common electrode; the steel pressing plate, the dish spring, the steel flat pad, the insulating sleeve, the chip and the copper pressing block are located at the upper part of the common electrode; and DCB ceramic chips are disposed between the common electrode and the copper bottom plate, and the lower surfaces of the DCB ceramic chips and the copper bottom plate are welded into one body. The DCB ceramic chips replace generally used ceramic bare chips, the DCB ceramic chips are welded onto the copper bottom plate at high temperature of 220 DEG C to 250 DEG C, the one body waits to be used after being cleaned up and then is assembled according to conventional assembling steps, and insulating paste is potted finally. Via testing, insulating voltage can achieve more than 25