High-low-junction-based majority-carrier conductivity-modulated power MOSFET device

The utility model provides a high-low-junction-based majority-carrier conductivity-modulated power MOSFET device, wherein an N layer with the doped concentration thereof much larger than that of a first N region is inserted between a P base region and an N drift region of a conventional power MOSFET...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	WANG LIMU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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