High-low-junction-based majority-carrier conductivity-modulated power MOSFET device

The utility model provides a high-low-junction-based majority-carrier conductivity-modulated power MOSFET device, wherein an N layer with the doped concentration thereof much larger than that of a first N region is inserted between a P base region and an N drift region of a conventional power MOSFET device. In this way, M/N high-low junctions having the majority-carrier injection function is built up by the N layer and the first N region. When the device is in the opened state, a positive bias is right applied on the high-low junctions by the voltage of a drain voltage. In this way, in a static state igh-low-junction-based majority-carrier conductivity-modulated power MOSFET deviceheight of the junction multi-conductivity modulation power MOSFET devices in the conventional power MOSFET in a p-base region and the n-drift region between a doping concentration than the n-region of the n layer is much improved power MOSFET device. The n layer and the n-layer has multi-functions of n injection n-height junction de