Chemical vapor deposition equipment for producing silicon carbide epitaxial wafer

The utility model provides equipment for improving the uniformity of a silicon carbide epitaxial wafer. According to the chemical vapor deposition equipment, the silicon carbide epitaxial wafer with the uniform thickness can grow. An arc-shaped airflow stopping ring is mounted below airflow of a reaction cavity and then a silicon carbide substrate is arranged on a supporting platform; the reaction cavity is heated to a temperature needed by epitaxy and reaction gas and carrier gas are introduced; finally, a silicon carbide epitaxial layer is formed on the silicon carbide substrate. According to the equipment provided by the utility model, the thickness of the prepared silicon carbide epitaxial wafer is uniform and the device is simple; the most feasible and cheapest method for improving traditional equipment is provided; excessive cost input is not needed and the equipment is good for industrial production.