Epitaxial wafer growth base disc

Epitaxial wafer growth base disc

The utility model discloses an epitaxial wafer growth base disc which comprises storage tanks and a disc body. The epitaxial wafer growth base disc is characterized in that the storage tanks are arranged on the disc body and are in round shapes with equal diameters. The epitaxial wafer growth base d...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIN XIHAN, HUANG YINGJIE, DENG SHUNDA
Format: Patent
Sprache:chi ; eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:The utility model discloses an epitaxial wafer growth base disc which comprises storage tanks and a disc body. The epitaxial wafer growth base disc is characterized in that the storage tanks are arranged on the disc body and are in round shapes with equal diameters. The epitaxial wafer growth base disc has the beneficial effects that 54 epitaxial wafers can grow on the epitaxial wafer growth base disc at one time, the production efficiency is high, the production cost is low, the uniformity of the epitaxial wafers is relatively good, and the quality of the epitaxial wafers is stable.