High-voltage LED chip having microstructure reflection reducing coating

The utility model belongs to the field of semiconductor luminescent device manufacture and particularly relates to a high-voltage LED chip having a microstructure reflection reducing coating. The structure of the high-voltage LED chip comprises a sapphire substrate, a buffer layer, a N-type layer, a quantum well layer, a P-type layer, an electrode on the P-type layer, an electrode on the N-type layer, a connection bridge, an ITO layer, and the reflection reducing coating which is coated on the ITO layer and has a cylindrical microstructure. By using the high-voltage LED chip having the microstructure reflection reducing coating, the reflection loss of LED is effectively reduced when an LED emits light, at the same time the total reflection of the light from the chip into the air is reduced through the microstructure, and besides, the reflection reducing coating itself can inhibit the moisture and the impurities of the chip itself from diffusing so that the final protection effects are exhibited.