High-power IGBT module package structure

The utility model provides a high-power IGBT module package structure. The structure comprises a base plate, ceramic substrates coated with copper, a semiconductor chip, power electrodes, control electrodes, a gel layer, an epoxy resin layer, and twisted-pair soft wires. The base plate, the gel layer, and the epoxy resin layer distributed from the bottom up. An upper surface and a lower surface of the ceramic substrate coated with copper are respectively welded with the semiconductor chip and the base plate. The ceramic substrates coated with copper and the semiconductor chip are packaged inside the gel layer. The power electrodes pass through the epoxy resin layer and the gel layer and are connected with the ceramic substrates coated with copper. The control electrodes are fastened through the epoxy resin layer, and are connected with the semiconductor chip through the twisted-pair soft wires and pads of the ceramic substrates coated with copper or are directly connected with the semiconductor chip. Through