Aluminum back field-free back passivation type solar crystal silicon cell

Provided by the utility model is an aluminum back field-free back passivation type solar crystal silicon cell that comprises front-side electrode main grids, front-side electrode fine grids, a front-side anti-reflection membrane and a P type silicon chip with a PN junction. A back-side passivation layer is arranged at the back of the silicon chip; back-side electrode main grids and back-side electrode fine grids are printed on and penetrate the back-side passivation layer to realize metal connection and conduction with the back side of the silicon chip. According to the utility model, the conversion efficiency of the cell can be substantially improved; application to a thin silicon chip can be realized; the utilization of equipment with aluminum back field printing and sintering can be reduced; and investment on laser equipment can also be reduced.