Semiconductor structure

The utility model relates to a semiconductor structure, comprising a substrate and a plurality of hybrid bumps. The substrate possesses a plurality of bump lower metal layers on which the hybrid bumps are formed, and each hybrid bump possesses a carrying part and a guiding connecting part; each guid...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GUO ZHIMING, LIN GONGAN, HE RONGHUA, CHEN SHENGHUI
Format: Patent
Sprache:chi ; eng
Schlagworte:
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Beschreibung
Zusammenfassung:The utility model relates to a semiconductor structure, comprising a substrate and a plurality of hybrid bumps. The substrate possesses a plurality of bump lower metal layers on which the hybrid bumps are formed, and each hybrid bump possesses a carrying part and a guiding connecting part; each guiding connecting part possesses a first joint layer and a second joint layer, and each carrying part possesses a carrying surface which possesses a first area and a second area; each first joint layer covers the first area of each carrying surface, is connected with the carrying part, and possesses a top surface and a ring wall, and each second joint layer covers the top surface and ring wall of each first joint layer.