Horizontal light-emitting diode

Provided is a horizontal light-emitting diode, comprising a substrate, a first semiconductor layer, a luminescent layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer is located on the substrate. The luminescent layer is located on the first se...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEN XIAOWEI, SUN XIEYANG
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:Provided is a horizontal light-emitting diode, comprising a substrate, a first semiconductor layer, a luminescent layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer is located on the substrate. The luminescent layer is located on the first semiconductor layer and exposes part of the first semiconductor layer. The second semiconductor layer is located on the luminescent layer. The first electrode is located on the exposed part of the first semiconductor layer. The second electrode is located on the second semiconductor layer. Upper surfaces of the first electrode and the second electrode possess substantially a same horizontal height.