Thin film transistor array substrate
The utility model discloses a thin film transistor array substrate, which comprises a plurality of scanning lines which are parallel to one another, a plurality of data lines which intersect with the scanning lines in a vertical and insulating mode, pixel units which are defined by any two adjacent...
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| creator | ZHANG CONGLONG |
| description | The utility model discloses a thin film transistor array substrate, which comprises a plurality of scanning lines which are parallel to one another, a plurality of data lines which intersect with the scanning lines in a vertical and insulating mode, pixel units which are defined by any two adjacent scanning lines and any two adjacent data lines and capacitance lines which are arranged between any two adjacent scanning lines. Long-shaped through holes are arranged on the capacitance lines along an extension direction of the capacitance lines, the long-shaped through holes are arranged on intersections between the capacitance lines and the data lines, and auxiliary capacitance lines which extend along an extension direction of the data lines are distributed symmetrically on two sides of the capacitance lines of hole walls of two sides of the long-shaped through holes. The thin film transistor array substrate can cut the connection between the auxiliary capacitance lines and the capacitance lines conveniently un |
| format | Patent |
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Long-shaped through holes are arranged on the capacitance lines along an extension direction of the capacitance lines, the long-shaped through holes are arranged on intersections between the capacitance lines and the data lines, and auxiliary capacitance lines which extend along an extension direction of the data lines are distributed symmetrically on two sides of the capacitance lines of hole walls of two sides of the long-shaped through holes. The thin film transistor array substrate can cut the connection between the auxiliary capacitance lines and the capacitance lines conveniently un</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120815&DB=EPODOC&CC=CN&NR=202383395U$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120815&DB=EPODOC&CC=CN&NR=202383395U$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG CONGLONG</creatorcontrib><title>Thin film transistor array substrate</title><description>The utility model discloses a thin film transistor array substrate, which comprises a plurality of scanning lines which are parallel to one another, a plurality of data lines which intersect with the scanning lines in a vertical and insulating mode, pixel units which are defined by any two adjacent scanning lines and any two adjacent data lines and capacitance lines which are arranged between any two adjacent scanning lines. Long-shaped through holes are arranged on the capacitance lines along an extension direction of the capacitance lines, the long-shaped through holes are arranged on intersections between the capacitance lines and the data lines, and auxiliary capacitance lines which extend along an extension direction of the data lines are distributed symmetrically on two sides of the capacitance lines of hole walls of two sides of the long-shaped through holes. 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Long-shaped through holes are arranged on the capacitance lines along an extension direction of the capacitance lines, the long-shaped through holes are arranged on intersections between the capacitance lines and the data lines, and auxiliary capacitance lines which extend along an extension direction of the data lines are distributed symmetrically on two sides of the capacitance lines of hole walls of two sides of the long-shaped through holes. The thin film transistor array substrate can cut the connection between the auxiliary capacitance lines and the capacitance lines conveniently un</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | Thin film transistor array substrate |
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