SOI N-type integrated high-current combined semi-conductor device

The utility model provides an SOI (silicon-on-insulator) N-type integrated high-current semi-conductor combination device which can improve the current density. The combined semi-conductor device comprises a P-type substrate and a buried oxide layer arranged on the P-type substrate, wherein, a P-typ...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SUN WEIFENG, SHI LONGXING, QIAN QINSONG, HUO CHANGLONG, LU SHENGLI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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