Transient voltage suppressor diode and Schottky diode combined transistor
The utility model discloses a transient voltage suppressor diode and Schottky diode combined transistor which is characterized in that leads at two poles of a transient voltage suppressor diode chip and a Schottky diode chip are connected in parallel and then encapsulated in a body to form a new dio...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The utility model discloses a transient voltage suppressor diode and Schottky diode combined transistor which is characterized in that leads at two poles of a transient voltage suppressor diode chip and a Schottky diode chip are connected in parallel and then encapsulated in a body to form a new diode transistor. The utility model has the advantages that: the space of downstream products is greatly saved; the repeated product production is avoided; the filling speed is increased; the production efficiency is improved; meanwhile, the production cost is reduced. |
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