Deep-modulation high speed attenuation-modulation component
The utility model relates to a deep-modulation high speed attenuation-modulation component which comprises switch PIN diodes (1), attenuator chips (2), microstrip lines (3), SMA (sub-miniature type A) connectors (4), a power source and control routing slot (5), a microstrip cavity (6) and a componen...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The utility model relates to a deep-modulation high speed attenuation-modulation component which comprises switch PIN diodes (1), attenuator chips (2), microstrip lines (3), SMA (sub-miniature type A) connectors (4), a power source and control routing slot (5), a microstrip cavity (6) and a component housing (7), wherein five switch PIN diodes (1) connected in parallel and two attenuator chips (2) connected in series are connected with each other through the microstrip lines (3) and positioned in the component housing (7); the SMA connectors (4) are arranged at the two ends of the housing (7); the power source and control routing slot (5) is formed on the housing (7); and the microstrip cavity (6) is formed in the microstrip cavity (6). The utility model enables that two functions, namely an attenuation function and a modulation function, are performed in one device; after the microwave integration is used, the miniaturization of functional modules is achieved, and the reliability and the matching ability are |
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