Light-emitting diode chip, side injection type backlight die set and directly-down backlight die set

Light-emitting diode chip, side injection type backlight die set and directly-down backlight die set

The utility model relates to an LED chip, which includes a reflecting layer, a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode layer, a second electrode layer and a light-screening device, wherein the first-type semiconductor layer is arranged on...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHUANG FUXIANG, LIN JIAFENG, WU DONGXING, HE ZHONGXING, WANG YAODONG
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:The utility model relates to an LED chip, which includes a reflecting layer, a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a first electrode layer, a second electrode layer and a light-screening device, wherein the first-type semiconductor layer is arranged on the reflecting layer while the active layer is arranged between the first-type semiconductor layer and the second-type semiconductor layer; furthermore, the first electrode layer is electrically connected with the first-type semiconductor layer and the second electrode layer is arranged on the second-type semiconductor layer; in addition, the light-screening device is arranged on the second electrode layer and can reflect the rays with the wavelengths ranged from 450nm to 525nm to provide the LED chip with high-purity light source.