Semiconductor device and method of manufacturing the same
Disclosed are a semiconductor device and method of fabricating the same. The semiconductor device includes an active area where a first conductive channel is formed, a gate electrode formed on the active area formed on the semiconductor substrate and a gate dielectric layer interposed between the ac...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Disclosed are a semiconductor device and method of fabricating the same. The semiconductor device includes an active area where a first conductive channel is formed, a gate electrode formed on the active area formed on the semiconductor substrate and a gate dielectric layer interposed between the active area and the gate electrode. The semiconductor device further includes a charge generating layer formed along the interface between the active area and the gate dielectric layer on the semiconductor substrate so that fixed charges are generated around the interface. |
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