Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories
Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories are provide d in the invention. The phase change memory device includes a switch and a storage node containing phase change materials the connected to the switch....
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| creator | NOH JIN-SEO,KIM KI-JOON,KHANG YOON-HO |
| description | Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories are provide d in the invention. The phase change memory device includes a switch and a storage node containing phase change materials the connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change layer is formed of an InSbTe compound doped with Ge. The phase change temperature and reset current of the phase change materials is lower than that using conventional GST compound. |
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The phase change memory device includes a switch and a storage node containing phase change materials the connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change layer is formed of an InSbTe compound doped with Ge. The phase change temperature and reset current of the phase change materials is lower than that using conventional GST compound.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2007</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070711&DB=EPODOC&CC=CN&NR=1996608A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070711&DB=EPODOC&CC=CN&NR=1996608A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NOH JIN-SEO,KIM KI-JOON,KHANG YOON-HO</creatorcontrib><title>Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories</title><description>Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories are provide d in the invention. 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The phase change memory device includes a switch and a storage node containing phase change materials the connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change layer is formed of an InSbTe compound doped with Ge. The phase change temperature and reset current of the phase change materials is lower than that using conventional GST compound.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories |
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