Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories

Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories

Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories are provide d in the invention. The phase change memory device includes a switch and a storage node containing phase change materials the connected to the switch....

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: NOH JIN-SEO,KIM KI-JOON,KHANG YOON-HO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories are provide d in the invention. The phase change memory device includes a switch and a storage node containing phase change materials the connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change layer is formed of an InSbTe compound doped with Ge. The phase change temperature and reset current of the phase change materials is lower than that using conventional GST compound.