Light-emitting diode and method for manufacturing the same

The invention provides a method for manufacturing a light-emitting diode (LED), which includes the steps of providing a foreign substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the foreig...

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Bibliographische Detailangaben
1. Verfasser: OHMAE AKIRA,SHIOMI MICHINORI,FUTAGAWA NORIYUKI,AMI TAKAAKI,MIYAJIMA TAKAO,HIRAMATSU YUUJI,HATADA IZUHO,OKANO NOBUKATA,TOMIYA SHIGETAKA,YANASHIMA KATSUNORI,HINO TOMONORI,NARUI HIRONOBU
Format: Patent
Sprache:eng
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Zusammenfassung:The invention provides a method for manufacturing a light-emitting diode (LED), which includes the steps of providing a foreign substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the foreign substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the foreign substrate until making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the foreign substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.