Light-emitting diode and method for manufacturing the same
The invention provides a method for manufacturing a light-emitting diode (LED), which includes the steps of providing a foreign substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the foreig...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention provides a method for manufacturing a light-emitting diode (LED), which includes the steps of providing a foreign substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the foreign substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the foreign substrate until making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the foreign substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type. |
---|