Plasma processing apparatus and method

The invention provides a plasma processing system characterised in that comprises a processing container for receiving a substrate to be processed and performing vacuum exhausting air; a first electrode and a second electrode supporting the substrate to be processed arranged in the processing contai...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KOSHIISHI AKIRA,SUGIMOTO MASARU,HINATA KUNIHIKO,KOBAYASHI NORIYUKI,KOSHIMIZU CHISHIO,OHTANI RYUJI,KIBI KAZUO,SAITO MASASHI,MATSUMOTO NAOKI,OOYA YOSHINOBU,IWATA MANABU,YANO DAISUKE,YAMAZAWA YOHEI,HANAO, IROKI,SATO MANABU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention provides a plasma processing system characterised in that comprises a processing container for receiving a substrate to be processed and performing vacuum exhausting air; a first electrode and a second electrode supporting the substrate to be processed arranged in the processing container oppositely; a first high-frequency power supply unit for applying a first high-frequency power of relatively high frequency to the second electrode; a second high-frequency power supply unit for applying a second high-frequency power of relatively low frequency to the second electrode; a DC power supply for applying a DC voltage to the first electrode; a gas supply unit for supplying gas which is to be processed to the processing container; and a controlling device for controlling one of the applied voltage, the applied current and the applied power from the DC power supply to the first electrode.