White light-emitting device and method for producing same

Disclosed is a white light-emitting device having high luminous efficiency which is prevented from luminance deterioration even in large electric current range. Also disclosed is a method for producing such a white light-emitting device with high yield. A white light-emitting device (1) is composed of a blue LED device (4) and a phosphor-containing oxide layer (8) which is integrated with the blue LED device (4). In the blue LED device (4), a p-side electrode (11) is formed on the surface of a p-type layer of an epitaxial layer (6) which is a GaN compound semiconductor thin film formed on a surface of a light-transmitting crystal substrate (3), and an n-side electrode (10) is formed on the bottom surface of a recessed portion (9) which is an n-type layer exposed by selectively etching a part of the p-type layer and the light-emitting layer. The oxide layer (8) is formed by sintering a YAG phosphor and a glass binder mainly containing SiO2, B2O3 and PbO for binding the phosphor. With this white light-emitting device, blue light emitted from the blue LED device is emitted through the oxide layer (8) to the outside as white light.