Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device having high reflectivity and a high electrical contact property between a light reflection layer and a semiconductor layer is provided. The semiconductor light emitting device is formed by laminating a semiconductor layer, a base layer and a light reflection layer in this order. The semiconductor layer is formed by laminating a buffer layer, a GaN layer, an n-type contact layer, an n-type cladding layer, an active layer, a p-type cladding layer and a p-type contact layer in this order. The base layer is formed on a surface of the p-type contact layer, and is made of a transition metal with Ag (silver) with a thickness of 1 nm to 10 nm inclusive. The light reflection layer (31) is formed on a surface of the base layer (30), and is made of Ag with a predetermined material.