Plasma processing apparatus and method

Plasma processing apparatus and method

There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute...

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Hauptverfasser: KOSHIISHI AKIRA,SUGIMOTO MASARU,HINATA KUNIHIKO,KOBAYASHI NORIYUKI,KOSHIMIZU CHISHIO,OHTANI RYUJI,KIBI KAZUO,SAITO MASASHI,MATSUMOTO NAOKI,OOYA YOSHINOBU,IWATA MANABU,YANO DAISUKE,YAMAZAWA YOHEI,HANAO, IROKI,SATO MANABU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:There is provided a plasma etching device for generating plasma as a processing gas between an upper electrode (34) and a lower electrode (16) and subjecting a wafer (W) to plasma etching. The upper electrode (34) includes a variable DC power source (50) for applying DC voltage so that the absolute value of the self bias voltage Vdc on the surface of the upper electrode (34) becomes large enough to obtain an appropriate sputter effect to the surface and the thickness of the plasma sheath on the upper electrode (34) becomes thick enough to form a desired miniaturization plasma.