Fast restoring rectifier structure

Besides using platinum, golden for example etc carrier lifetime attenuation element and/or radiation method, the quick recovery rectifier uses Schottky structure coherently. Under condition of positive bias, rectification process reduces minority carrier further. The quick recovery rectifier uses unpolished substrate and grossness diffusion in order to cost reduction. The invention also discloses shrunken structure of p-n junction with heavily doped film layer in order to stop and shrink space charge region of p-n junction. The shrunk p-n junction with lesser general charge within area of p-n junction improves reverse recovery time further. The p-n junction can be used alone, or can be used by combining with traditional carrier lifetime attenuation method, with Schottky structure and/or epitaxy substrate.