Semiconductor element with nickel silicide and method for preparing nickel silicide

The method includes following steps: first, supplying a semiconductor substrate of including multiple doping areas; next, forming a nickel layer on the said semiconductor substrate, and then carrying out a first heat treatment in quick speed to make the nickel layer act on the doping areas below; th...

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Bibliographische Detailangaben
Hauptverfasser:	HONG ZONGYOU, CAO BAOZHAO, CHEN MINGCONG, JIANG YIYING, CHEN YIWEI, ZHANG YULAN, XIE CHAOJING, HUANG CHANGQI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The method includes following steps: first, supplying a semiconductor substrate of including multiple doping areas; next, forming a nickel layer on the said semiconductor substrate, and then carrying out a first heat treatment in quick speed to make the nickel layer act on the doping areas below; then, removing unreacted nickel layer, and carrying out a second heat treatment in quick speed in order to form semiconductor elements of possessing silicide of nickel. The second heat treatment in quick speed includes a process of spike anneal under temperature between 400 to 600 deg.C.