Plasma reinforced chemical vapour deposition apparatus

A plasma chemical vapor deposition apparatus is provided to effectively disassemble a gas injection part supported on an upper portion of a chamber lead by connecting a chamber body with the chamber lead with a hinge part. A plasma chemical vapor deposition apparatus comprises a chamber body(10) hav...

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Bibliographische Detailangaben
1. Verfasser:	CHEONG GYONG-SEOK,ANDERAN YOUSAKERF,PARK SEON-MAE,CHEONG HWA-JON,KIM EUNG-HYOO
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A plasma chemical vapor deposition apparatus is provided to effectively disassemble a gas injection part supported on an upper portion of a chamber lead by connecting a chamber body with the chamber lead with a hinge part. A plasma chemical vapor deposition apparatus comprises a chamber body(10) having a desired reaction chamber and an access opening, a gas injection part(30) disposed in the reaction chamber for spraying a deposition gas, and a chamber lead(20) coupled to the chamber body by a first hinge part(90). The hinge part is pivoted between an open position for opening the access opening and a close position for closing the access opening. A cleaning gas supply unit(50) supplies a cleaning gas to the reaction chamber.