Method for depositing silicon carbide and ceramic films

A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particul...

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Bibliographische Detailangaben
1. Verfasser: MEHREGANY MEHRAN,ZORMAN CHRISTIAN A.,FU XIAO AN,DUNNING JEREMY L
Format: Patent
Sprache:eng
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Zusammenfassung:A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.